PART |
Description |
Maker |
E0C63P366 |
CMOS 4-Bit Low Voltage Singl Single Chip Microcomputer Composed of 4-Bit E0C63000 Core CPU,RAM,Rewritable ROM,Segment LCD Driver,On-Board Writing
|
爱普生(中国)有限公
|
W25X16VSSIG W25X32VSSIG W25X64VSSIG W25X16VSFI W25 |
16M-BIT, 32M-BIT, AND 64M-BIT SERIAL FLASH MEMORY WITH 4KB SECTORS AND DUAL OUTPUT SPI
|
Winbond
|
W25X32VDAI W25X32VDAIZ W25X32VZPI W25X32VZPIZ W25X |
16M-BIT, 32M-BIT, AND 64M-BIT SERIAL FLASH MEMORY WITH 4KB SECTORS AND DUAL OUTPUT SPI
|
Winbond http://
|
IBM13N64734HCA |
64M x 72 Two-Bank Unbuffered SDRAM Module(64M x 64 2组不带缓冲同步动态RAM模块) 64米72双行缓冲内存模组4米64 2组不带缓冲同步动态内存模块)
|
International Business Machines, Corp.
|
IBM13M64734BCA |
64M x 72 1 Bank Registered/Buffered SDRAM Module(64M x 72 1组寄缓冲同步动态RAM模块)
|
IBM Microeletronics
|
MX23L6410 23L6410 |
64M-BIT Mask ROM (8/16 Bit Output) From old datasheet system
|
Macronix 旺宏
|
UPD4664312F9-BE75X-CR2 UPD4664312F9-B65X-CR2 |
64M-BIT CMOS MOBILE SPECIFIED RAM 4M-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION 6400位CMOS移动指明内存分词6位温度范
|
NEC Corp. PerkinElmer, Inc.
|
K9F1216U0A |
64M x 8 Bit , 32M x 16 Bit NAND Flash Memory
|
Samsung Electronic
|
K9F1208U0A-P K9F1216D0A K9F1216D0A-P K9F1216D0A-Y |
64M x 8 Bit , 32M x 16 Bit NAND Flash Memory
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
MC-4R64CPE6C-653 MC-4R64CPE6C-745 MC-4R64CPE6C MC- |
Direct Rambus DRAM RIMM Module 64M-BYTE (32M-WORD x 16-BIT) Direct Rambus?/a> DRAM RIMM?/a> Module 64M-BYTE (32M-WORD x 16-BIT) Direct Rambus垄芒 DRAM RIMM垄芒 Module 64M-BYTE (32M-WORD x 16-BIT)
|
http:// Elpida Memory
|
UPD4564323G5-A10-9JH UPD4564323G5-A60-9JH UPD45643 |
64M-bit Synchronous DRAM 4-bank/ LVTTL 64M-bit Synchronous DRAM 4-bank, LVTTL 6400位同步DRAM 4银行,LVTTL
|
NEC Corp. NEC, Corp.
|
IS42S16400C |
64M-Bit x 16-Bit 4 4-Bank SDRAM
|
ISSI
|